2014. 3. 31 1/3 semiconductor technical data kds160 silicon epitaxial planar diode revision no : 8 ultra high speed switching application. features h small package : usc. h low forward voltage. h fast reverse recovery time. h small total capacitance. maximum rating (ta=25 ? ) 1. anode 2. cathode usc dim millimeters a b c d e f g h j k 2.50 0.2 1.25 0.05 0.90 0.05 1.70 0.05 0.126 0.03 0~0.1 0.15 0.05 0.4 2 +4/-2 l m 4~6 i 1.0 max cathode mark m m i c j g d 2 1 b e k a f h l + _ + _ + _ + _ 0.30 0.06 + _ 0.27 0.10 + _ + _ + _ electrical characteristics (ta=25 ? ) marking uf type name lot no. characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma surge current (10ms) i fsm 2 a power dissipation p d * 200 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.60 - v v f(2) i f =10ma - 0.72 - v f(3) i f =100ma - 0.90 1.20 reverse current i r v r =80v - - 0.5 a total capacitance c t v r =0v, f=1mhz - 0.9 3.0 pf reverse recovery time t rr i f =10ma - 1.6 4.0 ns * : mounted on a glass epoxy circuit board of 20 ? 20mm, pad dimension of 4 ? 4mm.
2014. 3. 31 2/3 kds160 revision no : 8 1 0.1 reverse voltage v (r) r r t c - v reverse current i ( a) r 10 0 reverse voltage v (v) r total capacitance c (pf) 0 i - v i - v f forward voltage v (v) 0 f 10 forward current i (ma) ff 0.2 0.4 0.6 0.8 1.0 1.2 -2 -1 10 2 10 3 10 10 1 ta=100 c t a=25 c ta=-25 c rr 20 40 60 80 -3 -2 10 -1 10 1 10 ta=100 c ta=75 c ta=50 c ta=25 c t 0.4 0.8 1.2 1.6 2.0 3 10 30 100 f=1mhz ta=25 c t - i f forward current i (ma) 0.1 0.5 rr reverse recovery time t (ns) rr f 0.3 1 3 10 30 100 1 3 5 10 30 50 100 0.3 110 t ime t ( ms ) fsm i - t peak surge forward current 1 i (a) fsm 10 100 ta=25 c fig. 1 i fsm t
2010. 8. 25 3/3 kds160 revision no : 7 fig. 1. reverse recovery time(t ) test circuit rr 50 ? 2k ? e 50 ? input waveform input 0.01 f dut output sampling oscilloscope (r =50 ? ) in waveform 0.1 i r 0 i r f i =10ma rr t pulse generator (r =50 ? ) out 50ns -6v 0
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